Micron Technology DRAM SDRAMMobile-, Part #MT40A256M16LY-062E:F TR | Dynamic random access memory | DEX SPARTAN SLE:LPS25HBTR

SLE:LPS25HBTR

and non-volatile CPLD architecture ■ Instant-on (0

Excellent power factor correction

4-to-26 MHz crystal oscillator

Manufacturer: GE Healthcare

Micron Technology DRAM SDRAMMobile-, Part #MT40A256M16LY-062E:F TR | Dynamic random access memory | DEX SPARTAN SLE:LPS25HBTRMicron Technology DRAM SDRAM DDR4, MT40A256M16LY 062E: F TR Features VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V, 125mV +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O TC maximum up to 95C 64ms, 8192 cycle refresh up to 85C 32ms, 8192 cycle refresh at >85C to 95C 16 internal banks (x4, x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe preambles