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IRFB38N20 200V 43A N-Channel Power MOSFET Transistor Hall-Effect-Based Sensor IC 30A These are Metal Film Resistor

SKU: 47494882849

4.2
USD147.50 USD180.50

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Ships within 48 hours · Estimated delivery Aug 7 - Aug 12

Description

These are Metal Film Resistor with a value of 10M ohm 1/4W and tolerance of ±1%

Factory-trimmed for accuracy

Operating Voltage 1

Resistance Value 390k ohm Color Code Orange

Model TLP114A Brand TOSHIBA Isolation Voltage 3750 Vrms Output Supply Voltage  30V Input Reverse Voltage  5V Input Forward Current  20 mA Output Collector Power Dissipation  100 mW Operating Temperature -55°C - 100°C Storage Temperature  -55°C - 125°C Package DIP

IRFB38N20 200V 43A N-Channel Power MOSFET Transistor Hall-Effect-Based Sensor IC 30A These are Metal Film ResistorAn N Channel MOSFET uses electrons to create a current channel. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of the carriers in N Channel MOSFETs is approximately 2 to 3 times higher than in P channel MOSFETs for the same RDS(on) value, thus the P Channel chip must be 2 to 3 times the size of the N Channel chip. As a result, MOSFET transistor N Channels are frequently preferred for high

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