Micron Technology DRAM SDRAM-DDR4, Part #:MT40A512M8SA-062E AAT:F | Dynamic random access memory | DEX Apple Watch MLX90316KGO

MLX90316KGO

CAP FILM 1

LNV:02DL848

MT40A1G16TB-062E:F TR

other (Normal-ver

Micron Technology DRAM SDRAM-DDR4, Part #:MT40A512M8SA-062E AAT:F | Dynamic random access memory | DEX Apple Watch MLX90316KGOMicron Technology DRAM SDRAM DDR3L, MT40A512M8SA 062E AAT: F Features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V 125mV +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh maximum interval time at TC temperature range: 64ms at 40C to 85C 32ms at 85C to 95C 16ms at 96C to 105C 8ms at 106C to 125C 16 internal banks ( x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch architecture